mosfet metaloxidesemiconductorfieldeffecttransistor baredie optimos?3powermostransistorchip IPC302N12N3 datasheet rev.2.5 final industrial&multimarket
2 optimos?3powermostransistorchip IPC302N12N3 rev.2.5,2014-07-25 final data sheet powermostransistorchip 1description ?n-channelenhancementmode ?fordynamiccharacterizationrefertothedatasheetofipb038n12n3g ?aql0.65forvisualinspectionaccordingtofailurecatalogue ?electrostaticdischargesensitivedeviceaccordingtomil-std883c ?diebond:solderedorglued ?backsidemetallization:nivsystem ?frontsidemetallization:alsisystem ?passivation:nitride(onlyonedgestructure) table1keyperformanceparameters parameter value unit v (br)dss 120 v r ds(on) 3.8 1) m w die size 6.7 x 4.5 mm 2 thickness 250 m type/orderingcode package marking relatedlinks IPC302N12N3 chip not defined - 2electricalcharacteristicsonwaferlevel at t j =25c,unlessotherwisespecified table2 values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 120 - - v v gs =0v, i d =1ma gate threshold voltage v gs(th) 2 3 4 v v ds = v gs , i d =275a zero gate voltage drain current i dss - 0.1 1 a v gs =0v, v ds =100v gate-source leakage current i gss - 1 100 na v gs =20v, v ds =0v drain-source on- resistance r ds(on) - 2.5 2) 100 3) m w v gs =10v, i d =2.0a reverse diode forward on-voltage v sd - 1.0 1.2 v v gs =0v, i f =1a avalanche energy, single pulse e as - 45 4) - mj i d =30 a, r gs =25 w 1) packaged in a p-to263-3 (see ref. product) 2) typicalbaredie r ds(on) ; v gs =10v 3) limited by wafer test-equipment 4) wafer tested. for general avalanche capability refer to the datasheet of ipb038n12n3 g d r a i n g a t e s o u r c e
3 optimos?3powermostransistorchip IPC302N12N3 rev.2.5,2014-07-25 final data sheet 3packageoutlines figure1outlinechip,dimensionsinm d r a i n g a t e s o u r c e
4 optimos?3powermostransistorchip IPC302N12N3 rev.2.5,2014-07-25 final data sheet revisionhistory IPC302N12N3 revision:2014-07-25,rev.2.5 previous revision revision date subjects (major changes since last revision) 2.5 2014-07-25 release final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2014infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n g a t e s o u r c e
|
